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cy7c1463bv33 36-mbit (2 m 18) flow-through sram with nobl? architecture cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-75212 rev. *a revised february 28, 2012 36-mbit (2 m 18) flow-through sram with nobl? architecture features no bus latency? (nobl?) arch itecture eliminates dead cycles between write and read cycles supports up to 133-mhz bus operations with zero wait states ? data is transferred on every clock pin-compatible and functionally equivalent to zbt? devices internally self timed output buf fer control to eliminate the need to use oe registered inputs for flow through operation byte write capability 3.3 v/2.5 v i/o power supply fast clock-to-output times ? 6.5 ns (for 133-mhz device) clock enable (cen ) pin to enable clock and suspend operation synchronous self timed writes asynchronous output enable cy7c1463bv33 available in jedec-standard pb-free 100-pin tqfp package three chip enables for simple depth expansion automatic power down feature available using zz mode or ce deselect burst capability ? linear or interleaved burst order low standby power functional description the cy7c1463bv33 is a 3.3 v, 2 m 18 synchronous flow -through burst sram designed spec ifically to support unlimited true back-to-back read/write operations without the insertion of wait states. the cy7c1463bv33 is equipped with the advanced no bus latency (nobl) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. this feature dramatically improves the thro ughput of data through the sram, especially in systems that require frequent write-read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock input is qualified by the clock enable (cen ) signal, which when deasserted suspends operation and extends the previous clock cycle. maximum access delay from the clock ri se is 6.5 ns (133-mhz device). write operations are controlled by the two or four byte write select (bw x ) and a write enable (we ) input. all writes are conducted with on-chip synchronous self timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide for easy bank selection and output tri-state c ontrol. to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence. selection guide description 133 mhz unit maximum access time 6.5 ns maximum operating current 310 ma maximum cmos standby current 120 ma
cy7c1463bv33 document number: 001-75212 rev. *a page 2 of 19 logic block diagram ? cy7c1463bv33 c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b memory array e input register address register write registry and data coherency control logic burst logic a0' a1' d1 d0 q1 q0 a0 a1 adv/ld ce adv/ld c c lk c en write drivers d a t a s t e e r i n g s e n s e a m p s write address register a0, a1, a o u t p u t b u f f e r s e zz sleep control
cy7c1463bv33 document number: 001-75212 rev. *a page 3 of 19 contents pin configurations ........................................................... 4 pin definitions .................................................................. 5 functional overview ........................................................ 6 single read accesses ................................................ 6 burst read accesses .................................................. 6 single write accesses ................................................. 6 burst write accesses .................................................. 7 sleep mode ................................................................. 7 interleaved burst address table (mode = floating or vdd) ................................................. 7 linear burst address table (mode = gnd) ............... 7 zz mode electrical characteri stics .............................. 7 truth table ........................................................................ 8 truth table for read/write .............................................. 8 maximum ratings ............................................................. 9 operating range ............................................................... 9 neutron soft error immunity ........................................... 9 electrical characteristics ................................................. 9 capacitance .................................................................... 10 thermal resistance ........................................................ 10 ac test loads and waveforms ..................................... 10 switching characteristics .............................................. 11 switching waveforms .................................................... 12 ordering information ...................................................... 15 ordering code definitions ..... .................................... 15 package diagram ............................................................ 16 acronyms ........................................................................ 17 document conventions ................................................. 17 units of measure ....................................................... 17 document history page ................................................. 18 sales, solutions, and legal information ...................... 19 worldwide sales and design s upport ......... .............. 19 products .................................................................... 19 psoc solutions ......................................................... 19
cy7c1463bv33 document number: 001-75212 rev. *a page 4 of 19 pin configurations figure 1. 100-pin tqfp (14 20 1.4 mm) pinout a a a a a1 a0 nc/288m nc/144m v ss v dd a a a a a a a nc nc v ddq v ss nc dqp a dq a dq a v ss v ddq dq a dq a v ss nc v dd dq a dq a v ddq v ss dq a dq a nc nc v ss v ddq nc nc nc nc nc nc v ddq v ss nc nc dq b dq b v ss v ddq dq b dq b nc v dd nc v ss dq b dq b v ddq v ss dq b dq b dqp b nc v ss v ddq nc nc nc a a ce 1 ce 2 nc nc bw b bw a ce 3 v dd v ss clk we cen oe a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a a adv/ld zz mode nc/72m cy7c1463bv33 byte a byte b a a
cy7c1463bv33 document number: 001-75212 rev. *a page 5 of 19 pin definitions name i/o description a 0 , a 1 , a input- synchronous address inputs used to select one of the address locations . sampled at the rising edge of the clk. a [1:0] are fed to the two-bit burst counter. bw a , bw b input- synchronous byte write inputs, active low . qualified with we to conduct writes to the sram. sampled on the rising edge of clk. we input- synchronous write enable input, active low . sampled on the rising edge of clk if cen is active low. this signal must be asserted low to in itiate a write sequence. adv/ld input- synchronous advance/load input . used to advance the on-chip address coun ter or load a new address. when high (and cen is asserted low) the internal burst counter is advanced. when low, a new address can be loaded into the device for an access. after being deselected, adv/ld must be driven low to load a new address. clk input- clock clock input . used to capture all synchronous inputs to the device. clk is qualified with cen . clk is only recognized if cen is active low. ce 1 input- synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/deselect the device. ce 2 input- synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device. ce 3 input- synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/desel ect the device. oe input- asynchronous output enable, asynchronous input, active low . combined with the synchronous logic block inside the device to control the direction of the i/o pins. when low, the i/o pins are allowed to behave as outputs. when deasserted high, i/o pins ar e tri-stated, and act as input data pins. oe is masked during the data portion of a write sequence, during the firs t clock when emerging from a deselected state, when the device is deselected. cen input- synchronous clock enable input, active low . when asserted low the clock signal is recognized by the sram. when deasserted high the clock signal is masked. since deasserting cen does not deselect the device, use cen to extend the previ ous cycle when required. zz input- asynchronous zz ?sleep? input . this active high input places the device in a non-time critical ?sleep? condition with data integrity preserved. during normal operation, this pin must be low or left floating. zz pin has an internal pull down. dq s i/o- synchronous bidirectional data i/o lines . as inputs, they feed into an on-chip da ta register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. t he direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dq s and dqp [a:b] are placed in a tri-state condition.the outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging fr om a deselected state, and when the device is deselected, regardless of the state of oe . dqp x i/o- synchronous bidirectional data parity i/o lines. functionally, these signals are identical to dq s . during write sequences, dqp x is controlled by bw x correspondingly. mode input strap pin mode input. selects the burst order of the device . when tied to gnd selects linear burst sequence. when tied to v dd or left floating selects interleaved burst sequence. v dd power supply power supply inputs to the core of the device . v ddq i/o power supply power supply for the i/o circuitry . v ss ground ground for the device . nc n/a no connects . not internally connected to the die.
cy7c1463bv33 document number: 001-75212 rev. *a page 6 of 19 functional overview the cy7c1463bv33 is a synchronous flow through burst sram designed specifically to eliminate wait states during write-read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock signal is qualified with the clock enable input signal (cen ). if cen is high, the clock signal is not recognized and all internal states are maintained. all synchronous operations are qualified with cen . maximum access delay from the clock rise (t cdv ) is 6.5 ns (133-mhz device). accesses can be initiated by asserting all three chip enables (ce 1 , ce 2 , ce 3 ) active at the rising edge of the clock. if clock enable (cen ) is active low and adv/ld is asserted low, the address presented to the device is latched. the access can either be a read or write oper ation, depending on the status of the write enable (we ). bw x can be used to conduct byte write operations. write operations are qualif ied by the write enable (we ). all writes are simplified with on-chip synchronous self timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) simplify depth expansion. all operations (reads, writes, and deselects) are pipelined. adv/ld must be driven low after the device has been deselected to load a new address for the next operation. single read accesses a read access is initiated when these conditions are satisfied at clock rise: cen is asserted low ce 1 , ce 2 , and ce 3 are all asserted active the write enable input signal we is deasserted high adv/ld is asserted low. the address presented to the address inputs is latched into the address register and presented to the memory array and control logic. the control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. the data is av ailable within 6.5 ns (133-mhz device) provided oe is active low. after the first clock of the read access, the output buffers are controlled by oe and the internal control logic. oe must be driven low in order for the device to drive out the requested data. on the subsequent clock, another operation (read/write/des elect) can be initiated. when the sram is deselected at clock rise by one of the chip enable signals, its output is tri-stated immediately. burst read accesses the cy7c1463bv33 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. adv/ld must be driven low to load a new address into the sram, as described in single read accesses . the sequence of the burst counter is determined by the mode input signal. a low input on mode selects a linear burst mode, a high selects an inter- leaved burst sequence. both burst counters use a0 and a1 in the burst sequence, and wraps around when incremented suffi- ciently. a high input on adv/ld increments the internal burst counter regardless of the state of chip enable inputs or we . we is latched at the beginning of a burst cycle. ther efore, the type of access (read or write) is maintained throughout the burst sequence. single write accesses write access are initiated when the following conditions are satisfied at clock rise: (1) cen is asserted low, (2) ce 1 , ce 2 , and ce 3 are all asserted active, and (3) the write signal we is asserted low. the address pr esented to the address bus is loaded into the address register . the write signals are latched into the control logic block. the data lines are automatically tri-stated regardless of the state of the oe input signal. this allows the external logic to present the data on dqs and dqp x . on the next clock rise the data presented to dqs and dqp x (or a subset for byte write operations, see truth table for details) inputs is latched into the device and the write is complete. additional accesses (read/write/deselect) can be initiated on this cycle. the data written during the writ e operation is controlled by bw x signals. the cy7c1463bv33 provides byte write capability that is described in the truth table. asserting the write enable input (we ) with the selected byte write select input selectively writes to only the desired bytes. bytes not selected during a byte write operation remains unaltered. a synchronous self timed write mechanism has been provided to simplify the write operations. byte write capability has been included to greatly simplify read/modify/write sequences, which can be reduced to simple byte write operations. because the cy7c1463bv33 is a common i/o device, data must not be driven into the device while the outputs are active. the output enable (oe ) can be deasserted high before presenting data to the dqs and dqp x inputs. doing so tri-states the output drivers. as a safety precaution, dqs and dqp x are automatically tri-stated during the data porti on of a write cycle, regardless of the state of oe . nc/72m n/a not connected to the die . can be tied to any voltage level. nc /144m n/a not connected to the die . can be tied to any voltage level. nc /288m n/a not connected to the die . can be tied to any voltage level. nc /576m n/a not connected to the die . can be tied to any voltage level. nc /1g n/a not connected to the die . can be tied to any voltage level. pin definitions (continued) name i/o description
cy7c1463bv33 document number: 001-75212 rev. *a page 7 of 19 burst write accesses the cy7c1463bv33 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four write operations without reasserting the address inputs. adv/ld must be driven low to load the initial address, as described in single write accesses on page 6 . when adv/ld is driven high on the subsequent clock rise, the chip enables (ce 1 , ce 2 , and ce 3 ) and we inputs are ignored and the burst counter is incremented. the correct bw x inputs must be driven in each cycle of the burst write, to write the correct bytes of data. sleep mode the zz input pin is an asynchronous input. asserting zz places the sram in a power conservation ?sleep? mode. two clock cycles are required to enter into or exit from this ?sleep? mode. while in this mode, data integrity is guaranteed. accesses pending when entering the ?sleep? mode are not considered valid nor is the completion of the o peration guaranteed. the device must be deselected prior to entering the ?sleep? mode. ce 1 , ce 2 , and ce 3 , must remain inactive for the duration of t zzrec after the zz input returns low. interleaved burst address table (mode = floating or v dd ) first address a1:a0 second address a1:a0 third address a1:a0 fourth address a1:a0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst address table (mode = gnd) first address a1:a0 second address a1:a0 third address a1:a0 fourth address a1:a0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min max unit i ddzz sleep mode standby current zz > v dd ? ? 0.2 v ? 100 ma t zzs device operation to zz zz > v dd ? 0.2 v ? 2t cyc ns t zzrec zz recovery time zz < 0.2 v 2t cyc ?ns t zzi zz active to sleep current th is parameter is sampled ? 2t cyc ns t rzzi zz inactive to exit sleep curr ent this parameter is sampled 0 ? ns
cy7c1463bv33 document number: 001-75212 rev. *a page 8 of 19 truth table the truth table for cy7c1463bv33 follows. [1, 2, 3, 4, 5, 6, 7] operation address used ce 1 ce 2 ce 3 zz adv/ld we bw x oe cen clk dq deselect cycle none h x x l l x x x l l->h tri-state deselect cycle none x x h l l x x x l l->h tri-state deselect cycle none x l x l l x x x l l->h tri-state continue deselect cycle none x x x l h x x x l l->h tri-state read cycle (begin burst) extern al l h l l l h x l l l->h data out (q) read cycle (continue burst) next x x x l h x x l l l->h data out (q) nop/dummy read (begin burst) external l h l l l h x h l l->h tri-state dummy read (continue burst) next x x x l h x x h l l->h tri-state write cycle (begin burst) external l h l l l l l x l l->h data in (d) write cycle (continue burst) next x x x l h x l x l l->h data in (d) nop/write abort (begin burs t) none l h l l l l h x l l->h tri-state write abort (continue burst) next x x x l h x h x l l->h tri-state ignore clock edge (stall) current x x x l x x x x h l->h ? sleep mode none x x xh x xxxx x tri-state truth table for read/write the read/write truth table for cy7c1463bv33 follows. [1, 8] function (cy7c1463bv33) we bw b bw a read hxx write ? no bytes written lhh write byte a ? (dq a and dqp a )lhl write byte b ? (dq b and dqp b )llh write both bytes lll notes 1. x = ?don't care.? h = logic high, l = logic low. bw x = l signifies at least one byte write select is active, bw x = valid signifies that the desired byte write selects are asserted, see truth table for details. 2. write is defined by bw x , and we . see truth table for read/write. 3. when a write cycle is detected, all i/os are tri-stated, even during byte writes. 4. the dqs and dqp x pins are controlled by the current cycle and the oe signal. oe is asynchronous and is not sampled with the clock. 5. cen = h, inserts wait states. 6. device powers up deselected and the i/os in a tri-state condition, regardless of oe . 7. oe is asynchronous and is not sampled with the clock rise. it is ma sked internally during write cycles. during a read cycle dqs a nd dqp x = tri-state when oe is inactive or when the device is deselected, and dqs and dqp x = data when oe is active. 8. table only lists a partial listing of the by te write combinations. any combination of bw x is valid appropriate write is done bas ed on which byte write is active.
cy7c1463bv33 document number: 001-75212 rev. *a page 9 of 19 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature .... ............ ............... ?65 ? c to +150 ? c ambient temperature with power applied ......................................... ?55 ?? c to +125 ? c supply voltage on v dd relative to gnd .....?0.5 v to +4.6 v supply voltage on v ddq relative to gnd .... ?0.5 v to +v dd dc voltage applied to outputs in tri-state ........................................?0.5 v to v ddq + 0.5 v dc input voltage ................................ ?0.5 v to v dd + 0.5 v current into outputs (low) ...... .................................. 20 ma static discharge voltage (mil-std-883, method 3015) ..... .............. .............. > 2001 v latch-up current .................................................... > 200 ma operating range range ambient temperature v dd v ddq industrial ?40 c to +85 c 3.3 v ? ? 5% / + 10% 2.5 v ? 5% to v dd neutron soft error immunity parameter description test conditions typ max* unit lsbu logical single-bit upsets 25 c 197 216 fit/ mb lmbu logical multi-bit upsets 25 c 0 0.01 fit/ mb sel single event latch-up 85 c 0 0.1 fit/ dev * no lmbu or sel events occurred during testing ; this column represents a statistical ? 2 , 95% confidence limit calculat ion. for more details refer to application note an54908 ?accelerated neutron ser testing and calculation of terrestrial failure rates? electrical characteristics over the operating range parameter [9, 10] description test conditions min max unit v dd power supply voltage 3.135 3.6 v v ddq i/o supply voltage for 3.3 v i/o 3.135 v dd v for 2.5 v i/o 2.375 2.625 v v oh output high voltage for 3.3 v i/o, i oh = ?4.0 ma 2.4 ? v for 2.5 v i/o, i oh = ?1.0 ma 2.0 ? v v ol output low voltage for 3.3 v i/o, i ol = 8.0 ma ? 0.4 v for 2.5 v i/o, i ol = 1.0 ma ? 0.4 v v ih input high voltage [9] for 3.3 v i/o 2.0 v dd + 0.3 v v for 2.5 v i/o 1.7 v dd + 0.3 v v v il input low voltage [9] for 3.3 v i/o ?0.3 0.8 v for 2.5 v i/o ?0.3 0.7 v i x input leakage current except zz and mode gnd ? v i ? v ddq ?5 5 ? a input current of mode input = v ss ?30 ? ? a input = v dd ?5 ? a input current of zz input = v ss ?5 ? ? a input = v dd ?30 ? a i oz output leakage current gnd ? v i ? v ddq, output disabled ?5 5 ? a i dd [11] v dd operating supply current v dd = max., i out = 0 ma, f = f max = 1/t cyc 7.5 ns cycle, 133 mhz ?310ma i sb1 automatic ce power down current ? ttl inputs v dd = max, device deselected, v in ? v ih or v in ? v il , f = f max , inputs switching 7.5 ns cycle, 133 mhz ?180ma notes 9. overshoot: v ih(ac) < v dd + 1.5 v (pulse width less than t cyc /2), undershoot: v il(ac) > ?2 v (pulse width less than t cyc /2). 10. t power-up : assumes a linear ramp from 0 v to v dd(min) within 200 ms. during this time v ih < v dd and v ddq < v dd . 11. the operation current is calculated with 50% read cycle and 50% write cycle.
cy7c1463bv33 document number: 001-75212 rev. *a page 10 of 19 i sb2 automatic ce power down current ? cmos inputs v dd = max, device deselected, v in ? 0.3 v or v in > v dd ? 0.3 v, f = 0, inputs static 7.5 ns cycle, 133 mhz ?120ma i sb3 automatic ce power down current ? cmos inputs v dd = max, device deselected, v in ? 0.3 v or v in > v ddq ? 0.3 v, f = f max , inputs switching 7.5 ns cycle, 133 mhz ?180ma i sb4 automatic ce power down current ? ttl inputs v dd = max, device deselected, v in ? v dd ? 0.3 v or v in ? 0.3 v, f = 0, inputs static 7.5 ns cycle, 133 mhz ?135ma electrical characteristics (continued) over the operating range parameter [9, 10] description test conditions min max unit capacitance parameter [12] description test conditions 100-pin tqfp max unit c in input capacitance t a = 25 ? c, f = 1 mhz, v dd = 3.3 v, v ddq = 2.5 v 6.5 pf c clk clock input capacitance 3 pf c io input/output capacitance 5.5 pf thermal resistance parameter [12] description test conditions 100-pin tqfp package unit ? ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, according to eia/jesd51. 25.21 c/w ? jc thermal resistance (junction to case) 2.28 c/w ac test loads and waveforms figure 2. ac test loads and waveforms output r = 317 ? r = 351 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v t = 1.5v 3.3v all input pulses v ddq gnd 90% 10% 90% 10% ? 1ns ? 1ns (c) output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v t = 1.25v 2.5v all input pulses v ddq gnd 90% 10% 90% 10% ? 1ns ? 1ns (c) 3.3 v i/o test load 2.5 v i/o test load note 12. tested initially and after any design or process change that may affect these parameters.
cy7c1463bv33 document number: 001-75212 rev. *a page 11 of 19 switching characteristics over the operating range parameter [13, 14] description 133 mhz unit min max t power [15] v dd (typical) to the first access 1 ? ms clock t cyc clock cycle time 7.5 ? ns t ch clock high 2.5 ? ns t cl clock low 2.5 ? ns output times t cdv data output valid after clk rise ? 6.5 ns t doh data output hold after clk rise 2.5 ? ns t clz clock to low z [16, 17, 18] 2.5 ? ns t chz clock to high z [16, 17, 18] ? 3.8 ns t oev oe low to output valid ? 3.0 ns t oelz oe low to output low z [16, 17, 18] 0 ? ns t oehz oe high to output high z [16, 17, 18] ? 3.0 ns setup times t as address setup before clk rise 1.5 ? ns t als adv/ld setup before clk rise 1.5 ? ns t wes we , bw x setup before clk rise 1.5 ? ns t cens cen setup before clk rise 1.5 ? ns t ds data input setup before clk rise 1.5 ? ns t ces chip enable setup before clk rise 1.5 ? ns hold times t ah address hold after clk rise 0.5 ? ns t alh adv/ld hold after clk rise 0.5 ? ns t weh we , bw x hold after clk rise 0.5 ? ns t cenh cen hold after clk rise 0.5 ? ns t dh data input hold after clk rise 0.5 ? ns t ceh chip enable hold after clk rise 0.5 ? ns notes 13. timing reference level is 1.5 v when v ddq = 3.3 v and is 1.25 v when v ddq = 2.5 v. 14. test conditions shown in (a) of figure 2 on page 10 unless otherwise noted. 15. this part has a voltage regulator internally; t power is the time that the power is supplied above v dd(minimum) initially, before a read or write operation can be initiated. 16. t chz , t clz ,t oelz , and t oehz are specified with ac test conditions shown in part (b) of figure 2 on page 10 . transition is measured 200 mv from steady-state voltage. 17. at any voltage and temperature, t oehz is less than t oelz and t chz is less than t clz to eliminate bus contention between srams when sharing the same data bus. these specifications do not impl y a bus contention condition, but reflect paramete rs guaranteed over worst case user conditions . device is designed to achieve high z prior to low z under the same system conditions. 18. this parameter is sampled and not 100% tested.
cy7c1463bv33 document number: 001-75212 rev. *a page 12 of 19 switching waveforms figure 3. read/write waveforms [19, 20, 21] write d(a1) 123 456789 clk t cyc t cl t ch 10 ce t ceh t ces we cen t cenh t cens bw x adv/ld t ah t as address a1 a2 a3 a4 a5 a6 a7 t dh t ds dq c ommand t clz d(a1) d(a2) q(a4) q(a3) d(a2+1) t doh t chz t cdv write d(a2) burst write d(a2+1) read q(a3) read q(a4) burst read q(a4+1) write d(a5) read q(a6) write d(a7) deselect oe t oev t oelz t oehz dont care undefined d(a5) t doh q(a4+1) d(a7) q(a6) notes 19. for this waveform zz is tied low. 20. when ce is low, ce 1 is low, ce 2 is high and ce 3 is low. when ce is high, ce 1 is high or ce 2 is low or ce 3 is high. 21. order of the burst sequence is determin ed by the status of the mode (0 = linear, 1 = interleaved). burst operations are opti onal.
cy7c1463bv33 document number: 001-75212 rev. *a page 13 of 19 figure 4. nop, st all and deselect cycles [22, 23, 24] switching waveforms (continued) read q(a3) 456 78910 a3 a4 a5 d(a4) 123 clk ce we cen bw [a:d] adv/ld address dq c ommand write d(a4) stall write d(a1) read q(a2) stall nop read q(a5) deselect continue deselect dont care undefined t chz a1 a2 q(a2) d(a1) q(a3) t doh q(a5) notes 22. for this waveform zz is tied low. 23. when ce is low, ce 1 is low, ce 2 is high and ce 3 is low. when ce is high, ce 1 is high or ce 2 is low or ce 3 is high. 24. the ignore clock edge or sta ll cycle (clock 3) illustrates cen being used to create a pause. a write is not performed during this cycle.
cy7c1463bv33 document number: 001-75212 rev. *a page 14 of 19 figure 5. zz mode timing [25, 26] switching waveforms (continued) t zz i supply clk zz t zzrec a ll inputs (except zz) dont care i ddzz t zzi t rzzi outputs (q) high-z deselect or read only notes 25. device must be deselected when entering zz mode. see truth t able for all possible signal conditions to deselect the device. 26. dqs are in high z when exiting zz sleep mode.
cy7c1463bv33 document number: 001-75212 rev. *a page 15 of 19 ordering information cypress offers other versions of this type of product in many different configurations and feat ures. the following table contai ns only the list of parts that are currently available. for a comp lete listing of all options, visit the cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products or contact your local sales representative. cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives and distributors. to find th e office closest to you, visit us at http://www.cypress.com /go/datasheet/offices . speed (mhz) ordering code package diagram part and package type operating range 133 CY7C1463BV33-133AXI 51-85050 100-pin tqfp (14 20 1.4 mm) pb-free industrial ordering code definitions temperature range: i = industrial pb-free package type: a = 100-pin tqfp frequency range: 133 mhz v33 = 3.3 v die revision part identifier: 1463 = ft, 2 mb 18 (36 mb) technology code: c = cmos marketing code: 7 = sram company id: cy = cypress i cy 1463 b - 133 a c v33 7 x
cy7c1463bv33 document number: 001-75212 rev. *a page 16 of 19 package diagram figure 6. 100-pin tqfp (14 20 1.4 mm) a100ra package outline, 51-85050 51-85050 *d
cy7c1463bv33 document number: 001-75212 rev. *a page 17 of 19 acronyms document conventions units of measure acronym description ce chip enable cen clock enable cmos complementary metal oxide semiconductor eia electronic industries alliance i/o input/output jedec joint electron devices engineering council lmbu logical multiple bit upset lsbu logical single bit upset nobl no bus latency oe output enable sel single event latch-up sram static random access memory tqfp thin quad flat pack ttl transistor-transistor logic we write enable symbol unit of measure c degree celsius mhz megahertz a microampere ma milliampere mm millimeter ms millisecond mv millivolt ns nanosecond ? ohm % percent pf picofarad vvolt wwatt
cy7c1463bv33 document number: 001-75212 rev. *a page 18 of 19 document history page document title: cy7c1463bv33, 36-mbit (2 m 18 ) flow-through sram with nobl? architecture document number: 001-75212 rev. ecn no. issue date orig. of change description of change ** 3488155 01/09/2012 njy new data sheet. *a 3534581 02/28/2012 njy changed status from preliminary to final.
document number: 001-75212 rev. *a revised february 28, 2012 page 19 of 19 nobl and no bus latency are trademarks of cypress semiconductor corporation. zbt is a trademark of integrated device technology , inc. all products and company names mentioned in this document may be the trademarks of their respective holders. cy7c1463bv33 ? cypress semiconductor corporation, 2012. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rig hts. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with cypres s. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a ma lfunction or failure may reasonably be expe cted to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress.com/sales. products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory optical & image sensing cypress.com/go/image psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 5

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